sot23 pnp silicon planar switching transistors issue 2 ? september 95 j partmarking details - BSS82B - cl bss82c - cm absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -800 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -60 v i c =-10 m a collector-emitter breakdown voltage v (br)ceo -60 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 i e =-10 m a collector cut-off current i cbo -10 -10 na m a v cb =-50v, v cb =-50v, t amb =150 c emitter cut-off current i ebo -10 na v be =-3v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 v v i c =-150ma,i b =-15ma* i c =-500ma,i b =50ma* static forward current transfer ratio bss80b bss80c h fe 40 100 120 300 i c =150ma,v ce =10v i c =150ma,v ce =10v transition frequency f t 200 mhz v ce =-20v,i c =-50ma f=100mhz output capacitance c obo 8pfv cb =-10v,f=1mhz delay time t d 10 ns v cc =-30v, i c =-150ma i b1 =-i b2 =-15ma rise time t r 40 ns storage time t s 80 ns fall time t f 30 ns * measured under pulsed conditions. pulse width = 300 m s. duty cycle 2% BSS82B bss82c c b e page number
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